CXL-Based
Memory Scalability
Computational Memory supports CXL 3.0, allowing main memory expansion up to 1TB by connecting four channels of 256GB DDR5 DIMMs without increasing the number of CPU memory channels.
This reduces unnecessary data replication and movement, enhancing overall system efficiency for applications requiring large-scale data processing.
Additionally, it supports bandwidth expansion up to 128GB/s through the PCIe Gen6 interface.
Enhanced Data Processing Efficiency with Near Data Processing Technology
Computational Memory is equipped with
a multi-core processor,
performing parallel offloading tasks (Near Data Processing, NDP) near the data, thus improving data processing speed and efficiency.
NDP technology minimizes latency from data movement across interfaces and significantly reduces TCO for applications requiring large-scale data processing.
Proven Performance through FPGA Prototypes
Computational Memory FPGA prototype
has demonstrated a 46% reduction in query processing time compared to server CPUs in database acceleration, with potential reductions up to 95% in ASIC
(based on TPC-H benchmarks)
Maximized Performance
with Cutting-Edge Process Technology
Computational Memory utilizes Samsung Foundry's advanced 4nm process, maximizing power efficiency and performance.
Strong RAS feature
- Double die Chipkill Correction
* RAS : Reliability, Availability, Serviceabiltiy
It supports multi-bit/multi-die DRAM ECC (Error Correction Code) and Chipkill, preventing critical system errors caused by various issues, and includes SSD RAID functionality for enhanced reliability.
Applications
LLM VECTOR DATABASES
SCALE-OUT DATABASES
GRAPH DATABASES
CXL-Based
Memory Scalability
Computational Memory supports CXL 3.0, allowing main memory expansion
up to 1TB by connecting four channels of 256GB DDR5 DIMMs
without increasing the number of CPU memory channels.
This reduces unnecessary data replication and movement,
enhancing overall system efficiency for applications
requiring large-scale data processing.
Additionally, it supports bandwidth expansion up to 128GB/s
through the PCIe Gen6 interface.
Enhanced Data
Processing Efficiency with
Near Data Processing Technology
Computational Memory is equipped with a multi-core processor,
performing parallel offloading tasks (Near Data Processing, NDP)
near the data, thus improving data processing speed and efficiency.
NDP technology minimizes latency from data movement
across interfaces and significantly reduces TCO for applications
requiring large-scale data processing.
Proven Performance
through FPGA Prototypes
Our FPGA prototype has demonstrated a 46% reduction
in query processing time compared to server CPUs in database acceleration, with potential reductions up to 95% in ASIC
(based on TPC-H benchmarks)
Maximized Performance
with Cutting-Edge Process Technology
Computational Memory utilizes Samsung Foundry's advanced 4nm process, maximizing power efficiency and performance.
Strong RAS feature - Double die Chipkill Correction
* RAS : Reliability, Availability, Serviceabiltiy
Computational Memory supports multi-bit/multi-die DRAM ECC (Error Correction Code) and Chipkill, preventing critical system errors caused by various reasons.
It also provides SSD RAID functionality for enhanced reliability.
Applications
LLM VECTOR DATABASES
SCALE-OUT DATABASES
GRAPH DATABASES
MetisX Co., Ltd.
Company Registration Number : 710-81-02837
Address : 20, Pangyoyeok-ro 241beon-gil, Bundang-gu, Seongnam-si, Gyeonggi-do, Republic of Korea
CEO : Jin Kim
© 2024 MetisX | All Rights Reserved
MetisX Co., Ltd.
Company Registration Number : 710-81-02837
Address : 20, Pangyoyeok-ro 241beon-gil, Bundang-gu,
Seongnam-si, Gyeonggi-do, Republic of Korea
CEO : Jin Kim
© 2024 MetisX | All Rights Reserved